Conductance quantization and shot noise of a double-layer quantum point contact
Conductance quantization and shot noise of a double-layer quantum point contact
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双层量子点接触的电导量子化和散粒噪声
DOI：
10.1103/physrevb.101.115401
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发表时间：
2020
影响因子：
3.7
通讯作者：
Y. Hirayama
中科院分区：
文献类型：
--
作者：
D. Terasawa;S. Norimoto;T. Arakawa;M. Ferrier;A. Fukuda;K. Kobayashi; Y. Hirayama
测量了GaAs/AlGaAs隧道耦合双量子阱中量子点接触的电导量子化和低于第一电导平台的散粒噪声。从电导测量中，我们观察到一个清晰的量子化电导平台和一个小的最小值。光谱测量揭示了三个最大值内的第一个钻石，从而表明三个最小值的电子子带的色散关系。散粒噪声测量表明，Fano因子的行为与这一观察结果是一致的。我们提出了一个模型，涉及这些功能的波数定向分裂子带由于一个强大的Rashba自旋轨道相互作用，这是由双层样品的中心势垒梯度。
The conductance quantization and shot noise below the first conductance plateauare measured in a quantum point contact fabricated in a GaAs/AlGaAs tunnel-coupled double quantum well. From the conductance measurement, we observe a clear quantized conductance plateau atand a small minimum in the transconductance at. Spectroscopic transconductance measurement reveals three maxima inside the first diamond, thus suggesting three minima in the dispersion relation for electric subbands. Shot noise measurement shows that the Fano factor behavior is consistent with this observation. We propose a model that relates these features to a wave-number directional split subband due to a strong Rashba spin-orbit interaction that is induced by the center barrier potential gradient of the double-layer sample.