Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes
Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes
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DOI：
10.1063/5.0115384
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发表时间：
2022-11
影响因子：
4
通讯作者：
K. Ide;N. Watanabe;T. Katase;M. Sasase;Junghwan Kim;S. Ueda;K. Horiba;H. Kumigashira;H. Hiramatsu;Hideo Hosono;T. Kamiya
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文献类型：
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作者：
K. Ide;N. Watanabe;T. Katase;M. Sasase;Junghwan Kim;S. Ueda;K. Horiba;H. Kumigashira;H. Hiramatsu;Hideo Hosono;T. Kamiya
在这项研究中，我们使用非晶氧化物半导体（AOS）材料作为发射层，在200°C的最高工艺温度下在玻璃基板上制造发光二极管（led）。采用掺杂稀土元素（Eu， Pr和Tb）的非晶氧化镓薄膜作为AOS发射层，即使在环境中，led也能在直流应用时发出清晰的红色，绿色和粉红色发光。共振光电子能谱揭示了每种稀土掺杂剂薄膜的电子结构差异，表明其发射机制不同，即电子-空穴复合和冲击激发。虽然人们普遍认为非晶态材料存在高浓度的中隙态和缺陷，不适合作为led的发射层，但所开发的掺稀土的AOS材料具有良好的发射层性能。这项研究为在恶劣环境下运行的柔性显示技术的进步提供了机会。
In this study, we fabricated light-emitting diodes (LEDs) on glass substrates at a maximum process temperature of 200 °C using amorphous oxide semiconductor (AOS) materials as emission layers. Amorphous gallium oxide films doped with rare-earth elements (Eu, Pr, and Tb) were employed as AOS emission layers, and the LEDs emitted clear red, green, and pink luminescence upon direct-current application even in the ambient environment. Resonance photoelectron spectroscopy revealed the difference in the electronic structure of the films for each rare-earth dopant, suggesting different emission mechanisms, viz., electron–hole recombination and impact excitation. Although it is widely believed that amorphous materials are unsuitable for use as emission layers of LEDs because of their high concentrations of mid-gap states and defects, the developed rare-earth-doped AOS materials show good performance as emission layers. This study provides opportunities for the advancement of flexible display technologies operating in harsh environments.