Heterojunction Photovoltaics Using Printed Colloidal Quantum Dots as a Photosensitive Layer
Heterojunction Photovoltaics Using Printed Colloidal Quantum Dots as a Photosensitive Layer
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DOI：
10.1021/nl803760j
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发表时间：
2009-02-01
期刊：
影响因子：
10.8
通讯作者：
Bulovic, Vladimir
中科院分区：
文献类型：
--
作者：
Arango, Alex C.;Oertel, David C.;Bulovic, Vladimir
我们展示了一种双层光伏器件，由胶体硒化镉（CdSe）量子点（QD）和N,N'-二苯基-N,N'-双（3-甲基苯基）[1,1'-联苯]-4,4'-二胺（TPD）分子的宽带隙有机空穴传输薄膜之间的异质结组成。使用微接触冲压将 QD 的主动吸光膜无损地印刷到 TPD 上。氧化铟锡 (ITO) 提供顶部接触。由此产生的器件结构可以适应不同尺寸的ON，为具有对称电极的架构产生异常大的开路电压（0.8V），并在第一个QD吸收峰处产生10％的内量子效率。
We demonstrate a bilayer photovoltaic device consisting of a heterojunction between colloidal cadmium selenide (CdSe) quantum dots (QDs) and a wide band gap organic hole-transporting thin film of N,N'-diphenyl-N,N'-bis(3-methylphenyl)[1,1'-biphenyl]-4,4'-diamine (TPD) molecules. The active light-absorbing film of QDs is nondestructively printed onto TPD using microcontact stamping. Indium-tin-oxide (ITO) provides the top contact. The resulting device structure can accommodate different size ON, produces an exceptionally large open circuit voltage (0.8 V) for an architecture with symmetric electrodes, and yields an internal quantum efficiency of 10% at the first QD absorption peak.