An 18.9% efficient black silicon solar cell achieved through control of pretreatment of Ag/Cu MACE

An 18.9% efficient black silicon solar cell achieved through control of pretreatment of Ag/Cu MACE
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An%2018.9%%20efficient%20black%20silicon%20solar%20cell%20achieved%20through%20control%20of%20pretreatment%20of%20Ag/Cu%20MACE

DOI:
10.1007/s10854-019-01189-0
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发表时间:
2019
期刊:
Journal of Materials Science: Materials in Electronics
影响因子:
--
通讯作者:
Liu Xinyu
Liu Xinyu
中科院分区:
其他
文献类型:
--
作者:
Zhang Pengfei;Sun Hengchao;Tao Ke;Jia Rui;Su Guoyu;Dai Xiaowan;Jin Zhi;Liu Xinyu

文献摘要

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随着金刚石线切割(DWS)技术成为多晶硅(mc-Si)太阳能电池的主流技术,相应的用于集光的绒面化技术显得更加突出。为了进一步降低成熟的Ag基金属辅助化学刻蚀(MACE)的生产成本,提出了一种Ag/Cu MACE方法。本文针对目前研究较少的预处理方法,研究了不同预处理方法对预处理效果的影响。实验结果表明,适当的预处理有助于获得均匀的纳米结构,低反射率和复合速度的硅晶片。分析了不同毛化方法的陷光机理。研究了纳米结构对表面钝化的影响。采用不同的制绒方法制备了工业化大面积太阳电池。结果表明,热碱预处理加织构剂更有利于获得高转化率。最后,在DWS mc-Si晶片上获得了18.91%的效率,这比传统酸织构的电池绝对高0.4%。
With diamond wire sawn (DWS) technique becoming mainstream of multicrystalline silicon (mc-Si) solar cells, the corresponding texturing technology for light harvesting is more prominent. In order to further reduce production costs of mature Ag-based metal assisted chemical etching (MACE), an Ag/Cu MACE method was proposed. In this paper, the influence of different pretreatment method which has few studies reported before was investigated. The experimental results indicated that appropriate pretreatment could contribute to achieve uniform nanostructure, low reflectivity and recombination velocities of the silicon wafers. The light trapping mechanism of different texturing method was analyzed. The impact of nanostructure on surface passivation was also studied. Industrial large area solar cells have been fabricated by applying different texturing method. The results showed that the pretreatment using hot alkaline solution with texturing additive was more beneficial to achieve high conversion efficiency. Finally, an efficiency of 18.91% was obtained on DWS mc-Si wafer, which is 0.4% absolutely higher than the cells with traditional acid texturing.