Complete composition tunability of InGaN nanowires using a combinatorial approach
Complete composition tunability of InGaN nanowires using a combinatorial approach
复制标题
DOI：
10.1038/nmat2037
复制
发表时间：
2007-12-01
期刊：
影响因子：
41.2
通讯作者：
Yang, Peidong
中科院分区：
文献类型：
--
作者：
Kuykendall, Tevye;Ulrich, Philipp;Yang, Peidong
近年来，III氮化物被广泛研究，因为它们在从高效固态照明和光伏到大功率和高温电子等各个方面都具有巨大的潜力（1-3）。特别是，InGaN三元合金对固态照明和光伏很感兴趣，因为它能够将这种材料的直接带隙从近紫外区调整到近红外区。为了合成InGaN氮化物，研究人员尝试了许多生长技术（4-13）。尽管如此，在制作高质量的InGaN薄膜和/或在整个组合物范围内具有可调性的独立纳米线方面仍然存在相当大的困难。在这里，我们首次报道了在x = 0到1的整个成分范围内生长单晶InxGa1-xN纳米线；该纳米线是通过低温卤化物化学气相沉积合成的(9)，并显示出在近紫外至近红外区域具有可调谐的发射。我们提出，这种特殊的成分可调性是由于低工艺温度和纳米线形态适应应变松弛生长的能力（14），这抑制了困扰薄膜群落的相分离趋势。
The III nitrides have been intensely studied in recent years because of their huge potential for everything from high-efficiency solid-state lighting and photovoltaics to high-power and temperature electronics(1-3). In particular, the InGaN ternary alloy is of interest for solid-state lighting and photovoltaics because of the ability to tune the direct bandgap of this material from the near-ultraviolet to the near-infrared region. In an effort to synthesize InGaN nitride, researchers have tried many growth techniques(4-13). Nonetheless, there remains considerable difficulty in making high-quality InGaN films and/or freestanding nanowires with tunability across the entire range of compositions. Here we report for the first time the growth of single-crystalline InxGa1-xN nanowires across the entire compositional range from x = 0 to 1; the nanowires were synthesized by low-temperature halide chemical vapour deposition(9) and were shown to have tunable emission from the near-ultraviolet to the near-infrared region. We propose that the exceptional composition tunability is due to the low process temperature and the ability of the nanowire morphology to accommodate strain-relaxed growth(14), which suppresses the tendency toward phase separation that plagues the thin-film community.