Stable Subloop Behavior in Ferroelectric Si-Doped HfO2
Stable Subloop Behavior in Ferroelectric Si-Doped HfO2
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DOI：
10.1021/acsami.9b12878
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发表时间：
2019-10-23
影响因子：
9.5
通讯作者：
Chae, Seung Chul
中科院分区：
文献类型：
--
作者：
Lee, Kyoungjun;Lee, Hyun-Jae;Chae, Seung Chul
The recent demand for analogue devices for neuromorphic applications requires modulation of multiple nonvolatile states. Ferroelectricity with multiple polarization states enables neuromorphic applications with various architectures. However, deterministic control of ferroelectric polarization states with conventional ferroelectric materials has been met with accessibility issues. Here, we report unprecedented stable accessibility with robust stability of multiple polarization states in ferroelectric HfO2. Through the combination of conventional voltage measurements, hysteresis temperature dependence analysis, piezoelectric force microscopy, first-principles calculations, and Monte Carlo simulations, we suggest that the unprecedented stability of intermediate states in ferroelectric HfO2 is due to the small critical volume size for nucleation and the large activation energy for ferroelectric dipole flipping. This work demonstrates the potential of ferroelectric HfO2 for analogue device applications enabling neuromorphic computing.
