Evolution of Bulk c-Si Properties during the Processing of GaP/c-Si Heterojunction Cell
Evolution of Bulk c-Si Properties during the Processing of GaP/c-Si Heterojunction Cell
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GaP/c-Si 异质结电池加工过程中块状 c-Si 性能的演变
DOI：
10.1016/j.egypro.2015.07.070
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
D. Muñoz
中科院分区：
文献类型：
--
作者：
R. Varache;M. Darnon;M. Descazeaux;Mickael Martin;T. Baron;D. Muñoz
目前非晶硅/晶硅异质结太阳电池的局限性之一是非晶硅(a-Si：H)层的光学损耗限制了短路电流。在这项工作中，我们建议在异质结太阳能电池中用一层薄的晶体磷化镓(GaP)层来取代非晶硅层。结果表明，与a-Si：H相比，GaP具有更好的透明性，从而保证了在紫外区的增益。然而，对于高质量的GaP外延生长来说，在GaP生长之前在MOCVD腔中进行的退火会降低体硅少数载流子的寿命。这种降解归因于快速扩散的物种，可以通过吸气过程来克服。
One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells are optical losses in the amorphous silicon (a-Si:H) layers that limit the short circuit current. In this work, we propose to replace amorphous silicon layers by a thin crystalline gallium phosphide (GaP) layer in heterojunctions solar cells. We show that the better transparency of GaPcompared to a-Si:H promises gain in the UV region. However, the annealing in the MOCVD chamber before GaP growth that is necessary for high quality GaP epitaxial growth degrades the bulk silicon minority carrier lifetime. This degradation is attributed to fast diffusing species and can be overcome by a gettering process.