Confronting surface hopping molecular dynamics with Marcus theory for a molecular donor-acceptor system.

Confronting surface hopping molecular dynamics with Marcus theory for a molecular donor-acceptor system.
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用分子供体-受体系统的马库斯理论面对表面跳跃分子动力学。

DOI:
10.1039/c6fd00107f
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发表时间:
2016
影响因子:
3.4
通讯作者:
Spencer J
Spencer J
中科院分区:
化学2区
文献类型:
--
作者:
Spencer J

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研究了最少开关表面跳跃(SH)在描述分子给体-受体体系电子转移(ET)中的性能。使用我们最近开发的基于碎片轨道的SH方法和简单的退相干校正,对大范围的重组能(λ)、电子耦合强度(Hab)和驱动力进行了计算机模拟。这种方法使我们能够计算SH ET率超过四个数量级,从亚皮秒到纳秒的时间制度。我们发现在非绝热的ET制度与半经典的ET理论很好的协议。正确的缩放的SH ET率与电子耦合强度得到的Marcus倒置制度再现,与先前报道的结果为自旋玻色子模型。然而,我们发现,SH ET率福尔斯下降到低于半经典ET率在绝热制度,其中的自由能垒是在我们的模拟中的顺序kBT。我们解释这一点的第一个签名的非指数人口衰减的初始电荷状态。对于更大的电子耦合(Hab = λ/2),自由能垒消失,ET率不再定义。在这一点上,我们观察到的电子振动时间尺度上的电荷弛豫的飞秒时间尺度上的热平均拉比振荡很好地描述了一个交叉。从非绝热极限的分析扩展到大的电子耦合和小的或甚至消失的激活势垒是相关的,为我们理解有机半导体中的电荷传输。
We investigate the performance of fewest switches surface hopping (SH) in describing electron transfer (ET) for a molecular donor–acceptor system. Computer simulations are carried out for a wide range of reorganisation energy (λ), electronic coupling strength (Hab) and driving force using our recently developed fragment orbital-based SH approach augmented with a simple decoherence correction. This methodology allows us to compute SH ET rates over more than four orders of magnitude, from the sub-picosecond to the nanosecond time regime. We find good agreement with semi-classical ET theory in the non-adiabatic ET regime. The correct scaling of the SH ET rate with electronic coupling strength is obtained and the Marcus inverted regime is reproduced, in line with previously reported results for a spin-boson model. Yet, we find that the SH ET rate falls below the semi-classical ET rate in the adiabatic regime, where the free energy barrier is in the order of kBT in our simulations. We explain this by first signatures of non-exponential population decay of the initial charge state. For even larger electronic couplings (Hab = λ/2), the free energy barrier vanishes and ET rates are no longer defined. At this point we observe a crossover from ET on the vibronic time scale to charge relaxation on the femtosecond time scale that is well described by thermally averaged Rabi oscillations. The extension of the analysis from the non-adiabatic limit to large electronic couplings and small or even vanishing activation barriers is relevant for our understanding of charge transport in organic semiconductors.
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