MODEL-INDEPENDENT STRUCTURE DETERMINATION OF THE INSB(111)2X2 SURFACE WITH USE OF SYNCHROTRON X-RAY-DIFFRACTION
MODEL-INDEPENDENT STRUCTURE DETERMINATION OF THE INSB(111)2X2 SURFACE WITH USE OF SYNCHROTRON X-RAY-DIFFRACTION
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DOI：
10.1103/physrevlett.54.1275
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发表时间：
1985-01-01
影响因子：
8.6
通讯作者：
ROBINSON, IK
中科院分区：
文献类型：
--
作者：
BOHR, J;FEIDENHANSL, R;ROBINSON, IK
我们利用DESY多丽丝存储环的同步辐射测量了InSb (111) 2x2重建表面的精确x射线晶体学数据。我们对这些模型进行了独立分析，发现了一个在单元胞中有7个原子的结构，这意味着一个位点是空的。对于III-V型半导体表面，键合配置是合理的，并且在拓扑结构上与GaAs (111) 2x2表面提出的“空位-屈曲”模型相同（投影）。InSb和GaAs结构之间的差异是显著的，反映了元素周期表中的化学趋势。
We have measured accurate x-ray crystallographic data from the InSb (111) 2× 2 reconstructed surface using synchrotron radiation from the DORIS storage ring at DESY. We have analyzed these independently of all models and find a structure with seven atoms in the unit cell, implying that one site is unoccupied. The bonding configuration is reasonable for a III-V semiconductor surface, and is topologically identical (in projection) to the" vacancy-buckling" model proposed for the GaAs (111) 2× 2 surface. The differences between the InSb and GaAs structures are significant and reflect chemical trends in the periodic table.