Excited Spin Engineering of In0.5Ga0.5As Quantum Dots by an Adjacent Two-Dimensional In0.1Ga0.9As Quantum Well Potential
Excited Spin Engineering of In0.5Ga0.5As Quantum Dots by an Adjacent Two-Dimensional In0.1Ga0.9As Quantum Well Potential
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相邻二维 In0.1Ga0.9As 量子阱势激发 In0.5Ga0.5As 量子点的自旋工程
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
and A. Murayama
中科院分区：
文献类型：
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作者：
S. Hiura;K. Takeishi;J. Takayama;T. Kiba;and A. Murayama
