An adaptive striping architecture for flash memory storage systems of embedded systems
An adaptive striping architecture for flash memory storage systems of embedded systems
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DOI：
10.1109/rttas.2002.1137393
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发表时间：
2002-09
期刊：
影响因子：
--
通讯作者：
Li-Pin Chang;Tei-Wei Kuo
中科院分区：
文献类型：
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作者：
Li-Pin Chang;Tei-Wei Kuo
闪存由于其非易失性、抗冲击和省电的特性，现在已经成为构建嵌入式或便携式设备的关键组件。由于闪存的特性非常不同，针对许多面向块的存储介质提出的机制不能直接应用于闪存。与以往的工作不同，我们提出了一种自适应分条体系结构来显著提高系统性能。提出的机制和体系结构的能力在现实的原型和工作负载上得到了演示。
Flash memory is now a critical component in building embedded or portable devices because of its nonvolatile, shock-resistant, and power-economic nature. With the very different characteristics of flash memory, mechanisms proposed for many block-oriented storage media cannot be directly applied to flash memory. Distinct from the past work, we propose an adaptive striping architecture to significantly boost the system performance. The capability of the proposed mechanisms and architecture is demonstrated over realistic prototypes and workloads.