A 1 MHz hard-switched silicon carbide DC/DC converter
A 1 MHz hard-switched silicon carbide DC/DC converter
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1 MHz 硬开关碳化硅 DC/DC 转换器
DOI：
10.1109/tpel.2006.876891
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
C. Winerhalter
中科院分区：
文献类型：
--
作者：
Abou;A. Radun;V. Arthur;Chang Hsuch;C. Winerhalter
碳化硅（SiC）是一种宽带隙半导体材料，其为功率半导体提供了优于硅（Si）的性能改进，并为使用这些半导体的功率电子应用带来了好处。SiC的宽带隙导致更高的结正向压降，因此SiC最适合用于FET和肖特基二极管等多数载流子器件。SiC的宽带隙导致其具有高击穿电场，这又导致功率器件中的较低电阻率和较窄漂移区。这显著降低了漂移区的电阻，并且意味着可以使用面积比其对应的Si器件小得多的SiC器件。较低的器件面积减小了器件的电容，从而实现更高频率的操作。在这里，从1 MHz的硬开关DC/DC转换器采用SiC JFET和肖特基二极管的结果。该转换器被设计为将270 Vdc转换为42 Vdc，例如在未来的电动汽车中可能需要的。结果提供了在1 MHz下获得的性能，并证明了在此频率下工作的硬开关DC/DC转换器的可行性。
Silicon carbide (SiC) is a wide bandgap semiconductor material that offers performance improvements over silicon (Si) for power semiconductors with accompanying benefits for power electronics applications that use these semiconductors. The wide bandgap of SiC results in higher junction forward voltage drops, so SiC is best suited for majority carrier devices such as FETs and Schottky diodes. The wide bandgap of SiC results in it having a high breakdown electric field, which in turn results in lower resistivity and narrower drift regions in power devices. This dramatically lowers the resistance of the drift region and means that SiC devices with substantially less area than their corresponding Si devices can be used. The lower device area reduces the capacitance of the devices enabling higher frequency operation. Here the results from a 1 MHz hard-switched DC/DC converter employing SiC JFETs and Schottky diodes are presented. This converter was designed to convert 270 Vdc to 42 Vdc such as may be needed in future electric cars. The results provide the performance obtained at 1 MHz and demonstrate the feasibility of a hard-switched DC/DC converter operating at this frequency.