Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices
Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices
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DOI：
10.1063/1.1791758
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发表时间：
2004-10
影响因子：
3.2
通讯作者：
N. Zimmerman;E. Hourdakis;Y. Ono;A. Fujiwara;Yasuo Takahashi
中科院分区：
文献类型：
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作者：
N. Zimmerman;E. Hourdakis;Y. Ono;A. Fujiwara;Yasuo Takahashi
硅基的单电子隧穿(SET)器件最近已经成为金属基器件的重要替代品，无论是用于超大规模集成电路(ULSI)电子学还是用于电气计量。我们最近一直在使用硅中的可调势垒设计、制造和测量成套旋转门、泵和电荷耦合器件。在展示了这些设备的潜力之后，我们希望了解可能出现的错误机制，并预测这些错误的程度，以便确定这些设备的可行性。在本文中，我们花了大量的分析来考虑“动态”误差机制。这个特殊的错误考虑了电子在势垒升高时如何分裂，或者库仑阻塞是如何形成的。然后我们考虑各种各样的其他误差，包括热误差、频率误差、泄漏误差和加热误差。我们给出了错误率对每种机制的依赖关系，并预测了最大或最大误码率。
Si-based single-electron tunneling (SET) devices have of late become an important alternative to the metal-based ones, both for ultralarge scale integration (ULSI) electronics and for electrical metrology. We have very recently been designing, fabricating, and measuring SET turnstiles, pumps, and charge-coupled devices using tunable barriers in silicon. Having shown the potential of these devices, we wish to understand the error mechanisms which may manifest themselves, and to predict the level of these errors, in order to decide how feasible these devices will be. In this paper, we devote a substantial amount of analysis to the consideration of the “dynamical” error mechanism. This particular error considers how electrons split up as the barrier is raised, or alternatively how the Coulomb blockade is formed. We then consider a wide variety of other errors, including thermal, frequency, leakage, and heating errors. We show the dependence of the error rate on each of those mechanisms, and predict maxima or...