Sub 250nm deep-UV AlGaN/AlN distributed Bragg reflectors
Sub 250nm deep-UV AlGaN/AlN distributed Bragg reflectors
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DOI：
10.1063/1.4973581
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发表时间：
2017-01-02
影响因子：
4
通讯作者：
Dupuis, Russell D.
中科院分区：
文献类型：
--
作者：
Detchprohm, Theeradetch;Liu, Yuh-Shiuan;Dupuis, Russell D.
利用金属有机化学气相沉积技术在AlN/蓝宝石衬底上外延生长了AlxGa1-xN/AlN超晶格结构，获得了波长为220~250 nm的深紫外光分布布拉格反射器(DBR)，反射率接近1。由于AlxGa1-xN层中的近带激子共振，调节了AlN摩尔分数x，以使反射平台保持在AlGaN和AlN之间的折射率增强对比区内约7%-11%。对于采用流量调制外延技术生长的含有高折射率AlGaN层的DBR，获得了97%的反射率，总对数为30.5，远远少于具有常规生长的AlGaN层的DBR所需的对数。这些DBR的阻带约为6-9 nm。由AIP出版公司出版。
Deep-UV distributed Bragg reflectors (DBRs) operating at lambda = 220-250 nm with reflectivity close to unity were produced using epitaxial AlxGa1-xN/AlN superlattice structures grown on AlN/sapphire templates via metalorganic chemical vapor deposition. Owing to the near-bandedge excitonic resonance in the AlxGa1-xN layers, the AlN mole fractions, x, were regulated to keep the reflective plateau within the enhanced refractive index contrast region between AlGaN and AlN of approximately 7%-11%. For DBRs incorporating high-index layers of AlGaN grown via a flow-rate modulated epitaxy technique, a reflectivity of 97% was achieved with a total pair number of 30.5 which was much smaller than number of pairs needed for the DBRs with conventionally grown AlGaN layers. The stopbands of these DBRs were about 6-9 nm. Published by AIP Publishing.