Damping and magnetic anisotropy of ferromagnetic GaMnAs thin films
Damping and magnetic anisotropy of ferromagnetic GaMnAs thin films
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2008-09
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通讯作者：
Kh.Khazen;H. Bardeleben;M.Cubukcu;J.L.Cantin;V.Novak;K.Olejnik;M.Cukr;L.Thevenard;A. Lemaître
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作者：
Kh.Khazen;H. Bardeleben;M.Cubukcu;J.L.Cantin;V.Novak;K.Olejnik;M.Cukr;L.Thevenard;A. Lemaître
用X波段（9GHz）和Q波段（35GHz）铁磁共振（FMR）谱研究了退火后外延Ga_（0.93）Mn_（0.07）As层在拉应力和压应力下的磁性。通过对均匀模谱线宽的分析，确定了FMR吉尔伯特阻尼因子α。在T=4K时，我们得到压应力层的最小阻尼系数α = 0.003。它的值不是各向同性的。它在磁场易磁化轴方向上有一个极小值，并随测量温度的升高而增大。它的平均值是为两种类型的膜的顺序为0.01，尽管强烈的差异，在20 Oe和600 Oe之间变化的GaAs和GaInAs衬底上生长的层分别在不均匀的线宽。
The magnetic properties of annealed, epitaxial Ga0.93Mn0.07As layers under tensile and compressive stress have been investigated by X-band (9GHz) and Q-band (35GHz) ferromagnetic resonance (FMR) spectroscopy. From the analysis of the linewidths of the uniform mode spectra the FMR Gilbert damping factor"alpha"has been determined. At T=4K we obtain a minimum damping factor of"alpha"= 0.003 for the compressively stressed layer. Its value is not isotropic. It has a minimum value for the easy axes orientations of the magnetic field and increases with the measuring temperature. Its average value is for both type of films of the order of 0.01 in spite of strong differences in the inhomogeneous linewidth which vary between 20 Oe and 600 Oe for the layers grown on GaAs and GaInAs substrates respectively.