GaN nanotip pyramids formed by anisotropic etching
GaN nanotip pyramids formed by anisotropic etching
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DOI：
10.1063/1.1582233
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发表时间：
2003-07-01
影响因子：
3.2
通讯作者：
Chowdhury, A
中科院分区：
文献类型：
--
作者：
Ng, HM;Weimann, NG;Chowdhury, A
我们通过实验证明了氮极氮化镓在KOH溶液中选择性和各向异性蚀刻可以形成纳米尖金字塔。对于在同一晶圆上具有相邻Ga-和n -极性区域的样品，发现KOH溶液选择性地仅蚀刻n -极性表面，而保持Ga-极性表面完整。形成了一个六角形金字塔的集合，具有明确的{10 (1)/ bar (1) / bar}切面和直径小于类似于20 nm的非常锋利的尖端。金字塔的密度可以通过改变KOH浓度、溶液温度或蚀刻时间来控制。GaN刻蚀活化能估计为E(a)约为0.587 eV。具有尖锐尖端的致密氮化镓金字塔在电子和光子器件中都有应用。(C) 2003年美国物理研究所。
We experimentally demonstrate the formation of GaN nanotip pyramids by selective and anisotropic etching of N-polar GaN in KOH solution. For samples grown with adjacent Ga- and N-polar regions on the same wafer, the KOH solution was found to selectively etch only the N-polar surface while leaving the Ga-polar surface intact. An aggregation of hexagonal pyramids with well defined {10 (1) over bar (1) over bar} facets and very sharp tips with diameters less than similar to20 nm were formed. The density of the pyramids can be controlled by varying the KOH concentration, solution temperature or the etch duration. The GaN etching activation energy is estimated to be E(a)approximate to0.587 eV. Dense GaN pyramids with sharp tips have applications in both electronic and photonic devices. (C) 2003 American Institute of Physics.