Dielectric activity and ferroelectricity in piezoelectric semiconductor Li-doped ZnO
Dielectric activity and ferroelectricity in piezoelectric semiconductor Li-doped ZnO
复制标题
DOI：
10.1143/jjap.35.5160
复制
发表时间：
1996-09-01
期刊：
影响因子：
--
通讯作者：
Yamashita, H
中科院分区：
文献类型：
--
作者：
Onodera, A;Tamaki, N;Yamashita, H
研究了掺锂氧化锌陶瓷的介电常数、比热和D-E磁滞回线的温度依赖性。Zn1-xLixO在330k处发现了一个新的介电异常，x=0.17。在比热中也发现了一个尖状异常。首次成功地观察到铁电D-E磁滞回线。这些观察结果表明，在纤锌矿型ZnO压电半导体中，小Li离子取代主Zn离子可诱导铁电相。该材料是集成铁电器件中铁电薄膜的候选材料。
Temperature dependences of dielectric constants, specific heat and D-E hysteresis loops of Li-doped zinc oxide ceramics were investigated. A new dielectric anomaly was found at 330 K in Zn1-xLixO with x=0.17. A cusp-like anomaly was also found in specific heat. A ferroelectric D-E hysteresis loop was successfully observed for the first time. These observations suggest that replacement of host Zn ions by small Li ions induces a ferroelectric phase in the wurtzite-type ZnO piezoelectric semiconductor. This material is a candidate for ferroelectric thin films in integrated ferroelectric devices.