1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop
1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop
复制标题
具有低通态压降的 1.2 kV、10 A、4H-SiC 双向场效应晶体管 (BiDFET)
DOI：
10.4028/www.scientific.net/msf.1004.872
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
D. Hopkins
中科院分区：
文献类型：
--
作者：
Ajit Kanale;Tzu;Kijeong Han;B. Baliga;S. Bhattacharya;D. Hopkins
双向功率开关用于矩阵或循环转换器以及多级逆变器电路中，以促进高频交流到交流转换。使用封装在四端子定制设计模块内的两个分立 SiC 功率 MOSFET 裸芯片实现并演示了一种新型低导通电阻 1.2 kV 双向 MOSFET (BiDFET)。已进行静态和动态表征，以检查 BiDFET 的导通状态和开关行为。 BiDFET 在 10 A 电流下具有 0.6 V 的低正向压降，比之前基于 Si IGBT 和 SiC MOSFET 的双向开关实现小 2.5 倍以上。
Bidirectional power switches are used in matrix-or cyclo-converters and in multistage inverter circuits to facilitate high-frequency AC-to-AC conversion. A new 1.2 kV bidirectional MOSFET (BiDFET) with low on-resistance is achieved and demonstrated using two discrete SiC power MOSFET bare die chips, packaged within a four-terminal custom-designed module. Static and dynamic characterization has been carried out to inspect the on-state and switching behaviour of the BiDFET. The BiDFET is shown to have a low forward voltage drop of 0.6 V at a current of 10 A, which is more than 2.5x smaller than previous Si IGBT and SiC MOSFET based bidirectional switch implementations.