Modelling and calculation of silicon conduction band structure and parameters with arbitrary uniaxial stress
Modelling and calculation of silicon conduction band structure and parameters with arbitrary uniaxial stress
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任意单轴应力下硅导带结构及参数的建模与计算
DOI：
10.4236/jamp.2018.61018
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
Chunyu Zhou
中科院分区：
文献类型：
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作者：
Guanyu Wang;Mingdao Yu;Chunyu Zhou
利用k·p理论，研究了Δ1和Δ2'带之间的耦合对不同能谷能带结构的影响。建立了适用于任意晶面、晶向和不同能谷的单轴应力下的能量色散关系的解析模型。对于典型的晶体取向，计算了能带结构的主要参数，如带边能级、分裂能、态密度（DOS）有效质量和电导有效质量。计算结果与相关文献报道的数据吻合较好。最后给出了不同晶面应力和取向变化与DOS有效质量、电导率有效质量的关系。该模型和计算结果可为纳米电子器件的设计和TCAD仿真提供理论参考。
Using the k·p theory, the coupling effect between the Δ1 and Δ2’ bands on the energy band structure of different energy valleys is studied. The analytical model of the energy-dispersion relationship applicable to uniaxial stress for arbitrary crystal plane and orientation as well as different energy valleys is established. For typical crystal orientations, the main parameters of energy band structure such as band edge level, splitting energy, density-of-state (DOS) effective mass and conductivity effective mass are calculated. The calculated results are in good agreement with the data reported in related literature. Finally, the relationship between the DOS effective mass, conductivity effective mass and the change of stress and orientation of different crystal planes is given. The proposed model and calculation results can provide a theoretical reference for the design of nano-electronic devices and TCAD simulation.