Determination of optical constant and dispersion parameters of Se75Sb10In15 thin film characterized by wide band gap
Determination of optical constant and dispersion parameters of Se75Sb10In15 thin film characterized by wide band gap
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DOI：
10.1007/s00339-017-0794-8
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发表时间：
2017-02
期刊：
影响因子：
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通讯作者：
M. Abd-Elrahman;A. A. Abu-sehly-A.;Sherouk Sh. El-sonbaty;M. Hafiz
中科院分区：
文献类型：
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作者：
M. Abd-Elrahman;A. A. Abu-sehly-A.;Sherouk Sh. El-sonbaty;M. Hafiz
使用热蒸发技术沉积不同厚度（50-300 nm）的硫属化物 Se75Sb10In15 薄膜。使用差示扫描量热法 (DSC) 获得硫族化物块体 Se75Sb10In15 的热分析图。确定结晶温度Tc、峰值结晶温度Tp和熔化温度Tm。 X射线衍射(XRD)测试表明沉积薄膜的结晶度随着厚度的增加而降低。光学透射和反射光谱记录在 250 至 2500 nm 的入射光子波长范围内。研究发现，薄膜厚度影响带隙区域的吸收系数、折射率、消光系数和局域态尾部宽度。沉积薄膜的吸收机制是直接允许的转变。随着膜厚度从 50 nm 增加到 300 nm，光学带隙能量 (Eg) 从 3.31 eV 降低到 2.51 eV。 Egis 的行为是根据较厚的薄膜中的结构紊乱来解释的。通过折射率的色散分析，研究了薄膜厚度对单振荡器和色散能量的影响。
Chalcogenide Se75Sb10In15thin films of different thickness (50–300 nm) are deposited using thermal evaporation technique. The thermogram of the chalcogenide bulk Se75Sb10In15is obtained using a differential scanning calorimetry (DSC). The crystallization temperatureTc, peak crystallization temperatureTpand melting temperatureTm, are identified. The X-ray diffraction (XRD) examination indicates the crystallinity of the as-deposited film decreases with increasing of thickness. Optical transmission and reflection spectra are recorded in the wavelength range of the incident photons from 250 to 2500 nm. It is found that the film thickness affects the absorption coefficient, refractive index, extinction coefficient and the width of the tails of localized states in the gap region. The absorption mechanism of the as-deposited films is a direct allowed transition. The optical band gap energy (Eg) decreases from 3.31 to 2.51 eV with increasing the film thickness from 50 to 300 nm. The behavior ofEgis explained on the basis of the structure disorders in the thicker films. The effect of the film thickness on the single-oscillator and dispersion energies is studied by the dispersion analyses of the refractive index.