ELECTRICAL TRANSPORT-PROPERTIES IN 2H-NBS2, 2H-NBSE2, 2H-TAS2 AND 2H-TASE2
ELECTRICAL TRANSPORT-PROPERTIES IN 2H-NBS2, 2H-NBSE2, 2H-TAS2 AND 2H-TASE2
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DOI：
10.1143/jpsj.51.219
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发表时间：
1982-01-01
影响因子：
1.7
通讯作者：
TANAKA, S
中科院分区：
文献类型：
--
作者：
NAITO, M;TANAKA, S
为了研究 CDW 系统中的载流子散射机制，我们对 4.2 K 至 300 K 之间的高质量 2H 金属过渡金属二硫属化物单晶进行了电阻率和霍尔系数的详细测量。 2H-NbS2 的电阻率没有 CDW 转变，显示出正常的行为。另一方面，在2H族中CDW转变温度最高(To=122 K)的2H-TaSe2中，观察到了一些反常特征。 2H-TaSe2 中电阻率的温度依赖性为~T5(T<15 K)、~T2(30 K<T<100 K) 和AT+B(T>To)。通过包含由于 CDW 的相位波动（电子相子散射、相位无序散射）而产生的“新”散射机制来分析结果。分析表明，McMillan 的声子熵模型比传统模型更适合 2H-TaSe2。
Detailed measurements of the resistivity and the Hall coefficient have been made on high-quality single crystals of 2Hmetallic transition-metal dichalcogenides between 4.2 K and 300 K, in order to investigate the carrier scattering mechanisms in a CDW system. The resistivity of 2H-NbS2, which has no CDW transition, shows normal behavior. On the other hand, in 2H-TaSe2which has the highest CDW transition temperature (To=122 K) of 2Hfamily, several anomalous features are observed. The temperature dependence of the resistivity in 2H-TaSe2is ∼T5(T<15 K), ∼T2(30 K<T<100 K) andAT+B(T>To). The results were analyzed by including a “new” scattering mechanism due to phase fluctuations of the CDW (electron-phason scattering, phase disorder scattering). The analysis suggests that McMillan's phonon entropy model is more appropriate in 2H-TaSe2than the conventional model.