Effects of SiC shape and oxidation on the infrared emissivity properties of ZrB2–SiC ceramics
Effects of SiC shape and oxidation on the infrared emissivity properties of ZrB2–SiC ceramics
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DOI：
10.1016/j.jallcom.2014.09.191
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发表时间：
2015-03
影响因子：
6.2
通讯作者：
Fuyuan Wang;Lai-fei Cheng;Yanan Xie;Jie Jian;Litong Zhang
中科院分区：
文献类型：
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作者：
Fuyuan Wang;Lai-fei Cheng;Yanan Xie;Jie Jian;Litong Zhang
以碳化硅晶须和碳化硅颗粒为原料，采用热压烧结法制备了ZrB2-碳化硅陶瓷，系统地研究了碳化硅形状和氧化对其红外发射率的影响。碳化硅晶须和碳化硅颗粒通过改变电磁波的传播方向来影响陶瓷的光谱发射率。与碳化硅颗粒相比，在相同体积比下，碳化硅晶须具有较小的比表面积，在陶瓷中具有相对较高的红外发射率。在1300℃下氧化不同时间后，陶瓷的总发射率变化在0.70-1.00之间。样品表面的氧化层减缓了红外发射率的增长速度，衬底对陶瓷的辐射行为起主导作用。研究还表明，样品表面暴露的氧化锆降低了陶瓷的红外发射率。
ZrB2–SiC ceramics were prepared by hot-pressing sintering using SiC whiskers and SiC particles and the effects of SiC shape and oxidation on the infrared emissivity properties of ZrB2–SiC ceramics were investigated systematically. SiC whiskers and SiC particles affected the spectral emissivity of ceramics by changing the propagation direction of electromagnetic waves. Compared with SiC particles, SiC whiskers had smaller surface area at the same volume ratio and caused relatively higher infrared emissivity in ceramics. After oxidation at 1300 °C for different time, the total emissivity of ZrB2–SiC ceramics varied in 0.70–1.00. The oxide layer on sample surface slowed down the increase rate of infrared emissivity and the substrate dominated the radiant behavior of ceramics. The investigation also illustrated that the exposed ZrO2on the samples surface degenerated the infrared emissivity properties of ZrB2–SiC ceramics.