First Measurement of the Nuclear-Recoil Ionization Yield in Silicon at 100 eV
First Measurement of the Nuclear-Recoil Ionization Yield in Silicon at 100 eV
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首次测量 100 eV 硅中的核反冲电离产额
DOI：
10.1103/physrevlett.131.091801
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发表时间：
2023
影响因子：
8.6
通讯作者：
Banik, S.
中科院分区：
文献类型：
--
作者：
Albakry, M. F.;Alkhatib, I.;Alonso, D.;Amaral, D. W. P.;Aralis, T.;Aramaki, T.;Arnquist, I. J.;Ataee Langroudy, I.;Azadbakht, E.;Banik, S.
我们用低温声子敏感克级探测器测量了硅中的核反冲电离产率。来自单能束的中子以与能量沉积相对应的角度从硅核中散射出来，从4 keV到100 eV，这是迄今为止探测到的最低能量。结果表明，在100 eV以上没有电离产生阈值的迹象。这些结果需要进一步研究电离产额理论和全面确定探测器在低于keV尺度的能量下的响应函数。
We measured the nuclear-recoil ionization yield in silicon with a cryogenic phonon-sensitive gram-scale detector. Neutrons from a monoenergetic beam scatter off of the silicon nuclei at angles corresponding to energy depositions from 4 keV down to 100 eV, the lowest energy probed so far. The results show no sign of an ionization production threshold above 100 eV. These results call for further investigation of the ionization yield theory and a comprehensive determination of the detector response function at energies below the keV scale.