High-performance FeSe0.5Te0.5 thin films fabricated on less-well-textured flexible coated conductor templates

High-performance FeSe0.5Te0.5 thin films fabricated on less-well-textured flexible coated conductor templates
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在质地较差的柔性涂层导体模板上制造高性能 FeSe0.5Te0.5 薄膜

DOI:
10.1088/1361-6668/30/3/035003
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发表时间:
2017-03-01
影响因子:
3.6
通讯作者:
Cai, Chuanbing
Cai, Chuanbing
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
Xu, Zhongtang;Yuan, Pusheng;Cai, Chuanbing

文献摘要

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报道了利用脉冲激光沉积技术,以LaMnO_3(LMO)为缓冲层,在织构较差的柔性涂层导体模板上制备FeSe0.5Te_(0.5)(FST)薄膜的输运特性。LMO缓冲层表现出较大的∼7.72°的面内错位,这对铜酸盐涂层导体是不利的,因为它的晶界很高。由于LMO和FST之间的压缩应变,FST薄膜的超导转变温度为16.8K,高于块体材料的超导转变温度。原子力显微镜观察表明,LMO和FST表面都出现了岛状特征,证实了岛状生长模式。在4.2K下观察到FST薄膜的自场输运临界电流密度高达0.43 MA cm−2,远高于管内粉末法制备的FST带材。在高达9T的外加磁场下,该薄膜的载流密度可达105A cm−2以上,显示出巨大的强场应用潜力。结果表明,对于FST,不需要高织构的金属带材就可以生产出高性能的涂层导体,这比铜酸盐涂层导体具有很大的优势。
We report on the transport properties of FeSe0.5Te0.5 (FST) thin films fabricated on less-well-textured flexible coated conductor templates with LaMnO3 (LMO) as buffer layers using pulsed laser deposition. The LMO buffer layers exhibit large in-plane misalignment of ∼7.72°, which is unfavorable for cuprate-coated conductors due to the high grain boundaries. The FST thin films show a superconducting transition temperature of 16.8 K, higher than that of bulk materials due to the compressive strain between LMO and FST. Atomic force microscopy observations reveal that island-like features appear at the surfaces of both LMO and FST, confirming the island growth mode. A self-field transport critical-current density of up to 0.43 MA cm−2 at 4.2 K has been observed in FST thin films, which is much higher than that in powder-in-tube processed FST tapes. The films are capable of carrying current densities of over 105 A cm−2 in the whole applied magnetic field up to 9 T, showing great potential for high-field applications. The results indicate that, for FST, highly textured metal tapes are not needed to produce coated conductors with high performance, which is of great advantage over cuprate-coated conductors.