Near-infrared free carrier absorption enhancement of heavily doped silicon in all-dielectric metasurface
Near-infrared free carrier absorption enhancement of heavily doped silicon in all-dielectric metasurface
复制标题
全电介质超表面中重掺杂硅的近红外自由载流子吸收增强
DOI：
10.1063/5.0023151
复制
发表时间：
2020-09-28
影响因子：
4
通讯作者：
Chen, Changhong
中科院分区：
文献类型：
--
作者：
Yu, Honghao;Xiong, Qing;Chen, Changhong
随着空穴迁移率随着自由载流子吸收 (FCA) 的增加而增加，重掺杂 p 型硅已成为检测光子能量低于半导体带隙的近红外 (NIR) 光的有前途的候选者，并且热载流子光电探测器能够达到接近商用器件的高响应度。为了增强半导体的性能相关 FCA，我们在这里展示了一种在纳米孔阵列中设计的全硅超表面吸收器，并对感兴趣的近红外光谱中的电磁共振机制进行了深入分析。笛卡尔坐标系下的多极分解表明，与掺杂引入的介电损耗相结合，磁偶极子共振主要有助于吸收增强。这种简单且易于制造的架构对于硅热载流子光电探测器具有巨大的潜力。
As the hole mobility increases with free carrier absorption (FCA), heavily doped p-type silicon has emerged as a promising candidate for detecting near-infrared (NIR) light with photonic energy below the semiconductor bandgap, and the hot-carrier photodetector is capable of high responsivity approaching commercially available devices. To enhance performance-related FCA of the semiconductor, here we demonstrate an all-silicon metasurface absorber designed in nanohole arrays and present an in-depth analysis on the electromagnetic resonance mechanism in the NIR spectral of interest. Multipole decomposition under a Cartesian coordinate system reveals that combining with the dielectric loss introduced by the doping, magnetic dipole resonances contribute predominantly to the absorption enhancement. This simple and easy-fabricated architecture has great potential for silicon hot-carrier photodetectors.