The Properties of Cu Thin Films on Ru Depending on the ALD Temperature.
The Properties of Cu Thin Films on Ru Depending on the ALD Temperature.
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Ru 上 Cu 薄膜的特性取决于 ALD 温度。
DOI：
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发表时间：
2015
影响因子：
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通讯作者：
S. Suh
中科院分区：
文献类型：
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作者：
Hyeong;Jin;Hwa;S. Suh
铜薄膜通过原子层沉积（ALD）沉积在钌上，这取决于衬底温度。在沉积Cu之前，衬底通过等离子体增强ALD（PEALD）在SiO2上沉积Ru和TaN，用于Si和Cu之间的粘附层。铜薄膜沉积200个循环。Cu的厚度取决于衬底温度而不同。用四探针、扫描电镜和原子力显微镜研究了铜薄膜的性质。通过等离子体增强ALD（PEALD）沉积用于粘附层的TaN和Ru层。此外，由于TaN层和Ru层的厚度太薄，因此通过TEM观察到它们。Cu薄膜的厚度和粗糙度随沉积温度的增加而增加，但在110 °C时没有沉积Cu薄膜。在170 °C的沉积温度下获得了最佳的铜薄膜方块电阻。
The copper thin films were deposited by Atomic layer deposition (ALD) on a ruthenium depending on the substrate temperatures. The substrate deposited Ru and TaN on SiO2 by plasma enhanced ALD (PEALD) before Cu deposition for an adhesion layer between Si and Cu. The copper thin films were deposited 200 cycles. The thickness of Cu was different depending on the substrate temperatures. The properties of copper thin films were investigated by a 4 point probe, SEM, and AFM. TaN and Ru layers were deposited by plasma enhanced ALD (PEALD) for the adhesion layer. Also, TaN and Ru layers were observed as TEM because the thickness was too thin. The thickness and roughness of Cu thin film increased depending on the deposition temperatures but, Cu thin film was not deposited at 110 °C. The best sheet resistance of the copper thin film was obtained at a deposition temperature of 170 °C.