Charge utilization efficiency in the electrochemical mechanical polishing of 4H-SiC (0001)
Charge utilization efficiency in the electrochemical mechanical polishing of 4H-SiC (0001)
复制标题
4H-SiC（0001）电化学机械抛光中的电荷利用效率
DOI：
10.1149/1945-7111/ac4b1f
复制
发表时间：
2022
影响因子：
3.9
通讯作者：
K. Yamamura,
中科院分区：
文献类型：
--
作者：
X. Yang;X. Yang;H. Gu;K. Kawai;K. Arima;K. Yamamura,
无浆电化学机械抛光 (ECMP) 在碳化硅 (SiC) 晶片的抛光中非常有效。为了使用 ECMP 实现 SiC 晶圆的高材料去除率 (MRR) 和低电能损失，研究了 SiC 表面阳极氧化中的电荷利用效率，并通过对 1 wt% NaCl 水溶液中 SiC 阳极氧化系统进行建模，阐明了其潜在机制。当电流密度小于 20 mA cm−2 时，SiC 阳极氧化中的电荷利用效率保持恒定，而当电流密度大于 30 mA cm−2 时，电荷利用效率显着下降，导致 MRR 显着降低。阳极氧化系统的建模表明，电荷利用效率取决于SiC表面施加的电位：当电位低于25 V vs Ag∣ AgCl时，SiC的氧化在阳极氧化系统中占据主导地位，当施加电位大于25 V时，由于H 2 O和Cl−的氧化发生，电荷利用效率大大降低。该研究为利用ECMP抛光SiC晶圆提供了理论和实践基础。
Slurryless electrochemical mechanical polishing (ECMP) is very effective in the polishing of silicon carbide (SiC) wafers. To achieve a high material removal rate (MRR) of SiC wafer using ECMP with low electrical energy loss, charge utilization efficiency in the anodic oxidation of the SiC surface was investigated and the underlying mechanism was clarified by modeling the anodic oxidation system of SiC in 1 wt% NaCl aqueous solution. The charge utilization efficiency in the anodic oxidation of SiC was found to be constant when the current density was less than 20 mA cm− 2 and significantly decreased when the current density was greater than 30 mA cm− 2, resulting in a significant reduction in the MRR. Modeling of the anodic oxidation system indicates that the charge utilization efficiency depended on the potential applied on the SiC surface: the oxidation of SiC occupied the dominant position in the anodizing system when the potential is lower than 25 V vs Ag∣ AgCl, charge utilization efficiency greatly decreased when the applied potential was greater than 25 V owing to the occurrence of oxidations of the H 2 O and Cl−. This research provides both a theoretical and practical foundation for using ECMP to polish SiC wafers.