Magnetic Flux Concentration Effects in Cantilever Magnetoelectric Sensors
Magnetic Flux Concentration Effects in Cantilever Magnetoelectric Sensors
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DOI：
10.1109/tmag.2015.2509948
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发表时间：
2016-05-01
影响因子：
2.1
通讯作者：
Gerken, Martina
中科院分区：
文献类型：
--
作者：
Gugat, Jascha Lukas;Schmalz, Julius;Gerken, Martina
本文在理论研究中研究了悬臂磁电 (ME) 传感器的谐振弯曲模式响应，重点关注外部施加磁场中的磁性行为。使用 2-D 和 3-D 有限元方法模拟求解耦合线性弹静/弹动力和静电/静磁方程组。磁场施加在整个 ME 传感器周围的充满空气的体积的边界处，以考虑在存在高磁导率材料的情况下磁场的几何相关变形。计算磁致伸缩 (MS) 材料的变形并在压电 (PE) 层上产生电势。如果 MS 层是在 PE 层的顶部生成的，则必须构造导电 MS 层来定义拾取区域，以增强传感器输出。为了有效激发共振弯曲模式，悬臂的尖端也需要覆盖 MS 材料。因此，气隙对于使两个 MS 区域电绝缘是必要的，并且气隙必须尽可能小，以免减少穿透到 MS 层的磁场。拾取区域的感应电势针对长：宽：高比为 100:20:3 的 Metglas-AlN-Si 薄膜 ME 传感器进行了优化。执行的 2-D 仿真显示感应电压具有合理的一致性，与 3-D 仿真相比偏差约为 20%，但计算时间要短得多。
This paper investigates the resonant bending-mode response of cantilever magnetoelectric (ME) sensors, with focus on the magnetic behavior in an external applied magnetic field, in a theoretical study. A system of coupled linear elastostatic/elastodynamic and electrostatic/magnetostatic equations is solved using 2-D and 3-D finite-element method simulations. The magnetic field is applied at the boundaries of an air-filled volume, surrounding the whole ME sensor, to consider the geometry-dependent deformation of the magnetic field in the presence of materials with high permeability. The deformation of the magnetostrictive (MS) material is calculated and generates an electric potential across a piezoelectric (PE) layer. Structuring the conductive MS layer is necessary to define a pickup region, if the MS layer is produced on top of the PE layer, to enhance the sensor output. For efficient excitation of the resonant bending mode, the tip of the cantilever also needs to be covered with an MS material. Thus, an air gap is necessary to electrically insulate both MS regions and has to be as small as possible to not decrease the magnetic field penetrating into the MS layer. The induced electric potential across the pickup region is optimized for a Metglas-AlN-Si thin-film ME sensor with an length: width: height ratio of 100:20:3. 2-D simulations are performed showing reasonable agreement in induced voltage with approximately 20% deviation compared with 3-D simulations, but with much lower computation times.