Structural and magnetic properties of epitaxially grown full-Heusler alloy Co2MnGe thin films deposited using magnetron sputtering
Structural and magnetic properties of epitaxially grown full-Heusler alloy Co2MnGe thin films deposited using magnetron sputtering
复制标题
DOI：
10.1063/1.2170980
复制
发表时间：
2006-04-15
影响因子：
3.2
通讯作者：
Yamamoto, M
中科院分区：
文献类型：
--
作者：
Ishikawa, T;Marukame, T;Yamamoto, M
采用磁控溅射法在MgO（001）衬底上外延生长了全Heusler合金Co2 MnGe薄膜。薄膜在室温下沉积，随后在400至600摄氏度的温度下原位退火。X射线极图测量显示出具有四重对称性的（111）峰，这直接证明了这些薄膜是外延的，并以L2（1）结构结晶。此外，制造的膜的横截面透射电子显微镜图像表明，它是单晶的。退火的膜具有足够平坦的表面形貌，在膜厚度为45 nm时具有约0.26 nm rms的粗糙度。退火膜的饱和磁化强度为4.49 μ（B）/f. u。在10 K下，对应于Co2 MnGe的Slater-Pauling值的约90%。(C)2006年，美国物理学会。
Full-Heusler alloy Co2MnGe thin films were epitaxially grown on MgO (001) substrates using magnetron sputtering. The films were deposited at room temperature and subsequently annealed in situ at temperatures ranging from 400 to 600 degrees C. X-ray pole figure measurements for the annealed films showed (111) peaks with fourfold symmetry, which gives direct evidence that these films are epitaxial and crystallized in the L2(1) structure. Furthermore, cross-sectional transmission electron microscope images of a fabricated film indicated that it is single crystalline. The annealed films had sufficiently flat surface morphologies with roughnesses of about 0.26 nm rms at film thicknesses of 45 nm. The saturation magnetization of the annealed films was 4.49 mu(B)/f.u. at 10 K, corresponding to about 90% of the Slater-Pauling value for Co2MnGe. (C) 2006 American Institute of Physics.