Dominant Mobility Modulation by the Electric Field Effect at the LaAlO3/SrTiO3 Interface
Dominant Mobility Modulation by the Electric Field Effect at the LaAlO3/SrTiO3 Interface
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DOI：
10.1103/physrevlett.103.226802
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发表时间：
2009-11-27
影响因子：
8.6
通讯作者：
Hwang, H. Y.
中科院分区：
文献类型：
--
作者：
Bell, C.;Harashima, S.;Hwang, H. Y.
Caviglia等人[Nature（伦敦）456，624（2008）]已经发现超导LaAlO 3/SrTiO 3界面可以被栅极调制。一个中心问题是确定所施加的电场的主效应。使用门控结构的磁输运研究，我们发现，迁移率的变化几乎是5倍的片状载流子密度。此外，超导性可以在正和负栅极偏压下被抑制。这些结果表明，相对无序强度强烈增加整个超导体-绝缘体转变。
Caviglia et al. [Nature (London) 456, 624 (2008)] have found that the superconducting LaAlO3/SrTiO3 interface can be gate modulated. A central issue is to determine the principal effect of the applied electric field. Using magnetotransport studies of a gated structure, we find that the mobility variation is almost 5 times that of the sheet carrier density. Furthermore, superconductivity can be suppressed at both positive and negative gate bias. These results indicate that the relative disorder strength strongly increases across the superconductor-insulator transition.