Resistive switching in silicon suboxide films
Resistive switching in silicon suboxide films
复制标题
DOI：
10.1063/1.3701581
复制
发表时间：
2012-04-01
影响因子：
3.2
通讯作者：
Kenyon, Anthony J.
中科院分区：
文献类型：
--
作者：
Mehonic, Adnan;Cueff, Sebastien;Kenyon, Anthony J.
我们报道了一项在硅基忆阻器/阻性RAM （RRAM）器件中电阻开关的研究，其中有源层是富硅二氧化硅。电阻开关现象是富硅氧化层的固有特性，不依赖于金属离子的扩散形成导电路径。与文献中的其他工作相反，开关发生在环境条件下，并且不限于活性材料的表面。我们提出了一种由竞争的场驱动形成和电流驱动的丝状导电通路破坏驱动的开关机制。我们证明，在高度非化学计量的亚氧化相中，通过由硅纳米包裹体组成的不连续传导路径，诱捕辅助隧道传导主导。我们假设这些纳米包裹体优先在纳米结构薄膜的内部晶界处成核。开关表现出忆阻系统的缩紧迟滞I/V回路特性，并且通/关电阻比可以很容易地达到10(4):1或更高。扫描隧道显微镜显示，可切换的导电通道直径为10nm或更小。编程电流可以低至2 μ A，转换时间在纳秒级。(C) 2012年美国物理研究所。[http://dx.doi.org/10.1063/1.3701581]
We report a study of resistive switching in a silicon-based memristor/resistive RAM (RRAM) device in which the active layer is silicon-rich silica. The resistive switching phenomenon is an intrinsic property of the silicon-rich oxide layer and does not depend on the diffusion of metallic ions to form conductive paths. In contrast to other work in the literature, switching occurs in ambient conditions, and is not limited to the surface of the active material. We propose a switching mechanism driven by competing field-driven formation and current-driven destruction of filamentary conductive pathways. We demonstrate that conduction is dominated by trap assisted tunneling through noncontinuous conduction paths consisting of silicon nanoinclusions in a highly nonstoichiometric suboxide phase. We hypothesize that such nanoinclusions nucleate preferentially at internal grain boundaries in nanostructured films. Switching exhibits the pinched hysteresis I/V loop characteristic of memristive systems, and on/off resistance ratios of 10(4):1 or higher can be easily achieved. Scanning tunneling microscopy suggests that switchable conductive pathways are 10 nm in diameter or smaller. Programming currents can be as low as 2 mu A, and transition times are on the nanosecond scale. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701581]