Growth of high mobility InSb by metalorganic chemical vapor deposition
Growth of high mobility InSb by metalorganic chemical vapor deposition
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DOI：
10.1007/bf02655249
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发表时间：
1994-02
影响因子：
2.1
通讯作者：
D. L. Partin;L. Green;J. Heremans
中科院分区：
文献类型：
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作者：
D. L. Partin;L. Green;J. Heremans
以三甲基铟和三甲基锑为反应物，采用金属有机化学气相沉积技术在绝缘GaAs衬底上生长了InSb薄膜。我们发现，得到的迁移率通常是低的，除非铟是预沉积到衬底上。这种铟预沉积技术大大提高了InSb薄膜的产量，室温下迁移率约为50000 cm 2 V − 1 S − 1，典型厚度为2微米。利用这种预沉积技术，这些膜的电子迁移率变得相对独立于生长期间的气相化学计量和生长温度。电子迁移率在整个晶片上也是非常均匀的。即使当薄膜生长速率超过2 μm/h时也能获得这些性能。
Thin films of InSb have been grown on insulating GaAs substrates using the metalorganic chemical vapor deposition technique with trimethyl indium and trimethyl antimony as reactants. We find that the mobilities obtained are usually low unless indium is predeposited onto the substrate. This indium predeposition technique greatly improves the yield of InSb films with mobilities of ~50000 crn2V−1S−1at room temperature and a typical thickness of 2 microns. With this predeposition technique, the electron mobilities of these films become relatively independent of the vapor stroichiometry during growth and of the growth temperature. The electron mobilities are also very uniform across a wafer. These properties are obtained even when the film growth rate exceeds 2 μm/h.