Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes
Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes
复制标题
Pt/HfO2/n-GaN 金属绝缘体半导体 (MIS) 肖特基二极管的温度相关电气特性
DOI：
10.1063/1.4930199
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发表时间：
2015
期刊：
影响因子：
1.6
通讯作者：
S. .. Krupanidhi
中科院分区：
文献类型：
--
作者：
A. Shetty;B. Roul;S. Mukundan;L. Mohan;G. Chandan;K. Vinoy;S. .. Krupanidhi
本文报道了通过在金属和半导体界面之间引入一层 HfO2 (5 nm) 来改善 Pt/n-GaN 金属半导体 (MS) 肖特基二极管的特性。与 MS 肖特基二极管相比，所得 Pt/HfO2/n-GaN 金属绝缘体半导体 (MIS) 肖特基二极管的整流比从 35.9 增加到 98.9(@ 2V)，势垒高度增加（0.52 eV 到 0.63eV），理想因子降低（2.1 到 1.3）。使用等离子体辅助分子束外延（PAMBE）生长厚度为300nm的外延n型GaN薄膜。使用高分辨率 X 射线衍射和光致发光测量证实了薄膜的晶体和光学质量。制造了金属-半导体 (Pt/n-GaN) 和金属-绝缘体-半导体 (Pt/HfO2/n-GaN) 肖特基二极管。为了进一步了解 Pt/HfO2/GaN 界面，在 150 K 至 370 K 的温度范围内对 MIS 肖特基二极管进行了 I-V 表征。发现随着温度从 150 K 升至 370 K，势垒高度增加（0.3 eV 至 0.79 eV），理想因子降低（3.6 至 1.2）。这种温度依赖性归因于通过将实验数据拟合到势垒高度的高斯分布中，验证了接触和解释。 (C) 2015 年作者。
This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V), increase in barrier height (0.52 eV to 0.63eV) and a reduction in ideality factor (2.1 to 1.3) as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). The crystalline and optical qualities of the films were confirmed using high resolution X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) and metal-insulator-semiconductor (Pt/HfO2/n-GaN) Schottky diodes were fabricated. To gain further understanding of the Pt/HfO2/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV) and the ideality factor decreased (3.6 to 1.2) with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights. (C) 2015 Author(s).