Homoepitaxy of ZnO by pulsed‐laser deposition
Homoepitaxy of ZnO by pulsed‐laser deposition
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脉冲激光沉积 ZnO 的同质外延
DOI：
10.1002/pssr.200701052
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
M. Grundmann
中科院分区：
文献类型：
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作者：
H. Wenckstern;Heidemarie Schmidt;C. Hanisch;M. Brandt;C. Czekalla;G. Benndorf;G. Biehne;A. Rahm;H. Hochmuth;M. Lorenz;M. Grundmann
采用脉冲激光沉积法在O面氧化锌单晶上同质外延生长了氧化锌薄膜。水热法生长的氧化锌衬底在沉积前在1000℃的氧气气氛中热处理2 h。经过热处理后，衬底显示出200-400 nm宽阶梯之间的双层台阶，晶体结构得到了显着改善。薄膜表面呈闭合螺旋线，呈现c/2或c阶跃。最佳样品的(0002)摇摆曲线的半高宽为29“。与所使用的衬底类似，光致发光(PL)和热导纳谱表明，Al被包含在薄膜(<；1014 cm-3)中。然而，在室温下，导带以下200-400 meV的深能级是主要的施主。低温发光主要由(Al0，X)(I6，半高宽：200ueV)和极均匀的(σ≈1%)组成。
ZnO thin films were grown homoepitaxially on O‐face ZnO single crystals by pulsed‐laser deposition. The ZnO substrates grown by the hydrothermal method were heat‐treated in oxygen ambient at 1000 °C for 2 h prior to deposition. After the thermal treatment the substrates show bilayer steps between 200–400 nm wide terraces and a considerably improved crystalline structure. Thin film surfaces exhibit closed loop spirals and show steps of c /2 or c. The FWHM of the (0002) rocking curve of the best sample is 29″. Similar to the substrates used, Al is contained in the thin films (<1014 cm–3) as photoluminescence (PL) and thermal admittance spectroscopy suggest. However, deep levels between 200 and 400 meV below the conduction band are the dominant donors at room temperature. Low temperature PL is dominated by (Al0,X) (I6, FWHM: 200 µeV) and extremely homogeneous (σ ≈ 1%).