Analysis of thickness-extensional waves propagating in the lateral direction of solidly mounted piezoelectric thin film resonators
Analysis of thickness-extensional waves propagating in the lateral direction of solidly mounted piezoelectric thin film resonators
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DOI：
10.1109/tuffc.2005.1428043
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发表时间：
2003-10
期刊：
影响因子：
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通讯作者：
K. Nakamura;S. Sato;S. Ohta;K. Yamada;A. Doi
中科院分区：
文献类型：
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作者：
K. Nakamura;S. Sato;S. Ohta;K. Yamada;A. Doi
在固体安装的压电薄膜谐振器(SMR)中，声波不仅沿厚度方向传播，而且还沿横向传播。在本研究中，我们分析了SMR型压电薄膜谐振器中的声波，并推导了考虑横向波传播的横向波数与频率之间的色散关系。横向波数是一个复数，这是由于声能泄漏到基板上。结果还表明，Q因子可以从复截止频率计算出来，并且随着四分之一波(/SPL//4)层数的增加而增大。利用色散关系，在考虑电极边缘边界条件的情况下，分析了SMR的俘获能谐振模。
In a solidly mounted piezoelectric thin film resonator (SMR), acoustic waves propagate not only in the thickness direction but also in the lateral direction. In this study, we analyzed the acoustic wave in the SMR-type piezoelectric thin film resonator and derived the dispersion relation between the lateral wave number and frequency, considering wave propagation in the lateral direction. The lateral wave number was shown to be a complex number due to the leak of the acoustic energy to a substrate. It also was shown that the Q factor could be calculated from the complex cutoff frequency, and it becomes higher when the number of quarter-wave (/spl lambda//4) layers increases. Using the dispersion relation, the trapped-energy resonant modes of an SMR were analyzed, considering the boundary conditions at the edge of the electrode.