Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material
Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material
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DOI：
10.1063/1.4948960
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发表时间：
2016-05
影响因子：
3.2
通讯作者：
T. Tran;D. Pastor;Hemi H. Gandhi;L. Smillie;A. Akey;M. Aziz;James S. Williams
中科院分区：
文献类型：
--
作者：
T. Tran;D. Pastor;Hemi H. Gandhi;L. Smillie;A. Akey;M. Aziz;James S. Williams
通过离子注入和脉冲激光熔化合成Ge 1 −xSnx合金：实现IV族直接带隙材料
Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material