A simple criterion for determining the static friction force between nanowires and flat substrates using the most-bent-state method
A simple criterion for determining the static friction force between nanowires and flat substrates using the most-bent-state method
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DOI：
10.1088/0957-4484/26/16/165702
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发表时间：
2015-04-24
期刊：
影响因子：
3.5
通讯作者：
Huang, Han
中科院分区：
文献类型：
--
作者：
Hou, Lizhen;Wang, Shiliang;Huang, Han
一个简单的标准是开发，以评估目前可用的模型，估计纳米线和基板之间的静摩擦力使用的“最大的状态”的方法的适当性。实验测试了Al 2 O3纳米线与Si衬底之间的静摩擦力，验证了理论分析和判据的建立。结果发现，该模型仅适用于弯曲的纳米线与线长的最小曲率半径（L/RO）的比值不大于1。对于L/RO大于1的情况，静摩擦力被高估，因为它忽略了其切向分量的影响。
A simple criterion was developed to assess the appropriateness of the currently available models that estimate the static friction force between nanowires and substrates using the 'most-bentstate' method. Our experimental testing of the static friction force between Al2O3 nanowires and Si substrate verified our theoretical analysis, as well as the establishment of the criterion. It was found that the models are valid only for the bent nanowires with the ratio of wire length over the minimum curvature radius (L/RO) no greater than 1. For the cases with L/RO greater than 1, the static friction force was overestimated as it neglected the effect of its tangential component.