Effects of argon presputtering on the formation of aluminum contacts on polycrystalline diamond
Effects of argon presputtering on the formation of aluminum contacts on polycrystalline diamond
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DOI：
10.1063/1.351899
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发表时间：
1992-12
影响因子：
3.2
通讯作者：
T. Tachibana;J. Glass
中科院分区：
文献类型：
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作者：
T. Tachibana;J. Glass
给出了Al-金刚石界面的真空X射线光电子能谱和俄歇电子能谱的结果，Al覆盖层厚度高达10 A。还讨论了高达430 °C的沉积后退火效应。还对金刚石上的厚（约1500 A）Al触点进行了非原位电流-电压（I-V）测量。生长的金刚石表面，其上的Al是整流接触，不与Al发生化学相互作用，即使在退火后。另一方面，Ar+溅射的金刚石表面在低至430 °C的温度下退火时确实与Al反应以形成Al-C键。溅射表面上的Al导致欧姆接触。金刚石网络的变形以及通过金刚石表面的Ar+溅射形成的空位和未满足的键改变了Al接触的I-V特性，并且还促进了Al和C的固态相互扩散以及高温下的界面反应。
The results of in vacuo x‐ray photoelectron spectroscopy and Auger electron spectroscopy of Al‐diamond interfaces for Al overlayer thicknesses up to 10 A are presented. Postdeposition annealing effects up to 430 °C are also discussed. Ex situ current‐voltage (I‐V) measurements were also made on thick (∼1500 A) Al contacts on diamonds. The as‐grown diamond surface, on which Al was a rectifying contact, did not chemically interact with Al, even after annealing. An Ar+‐sputtered diamond surface, on the other hand, did react with Al to form Al—C bonds upon annealing at temperatures as low as 430 °C. Al on the sputtered surface resulted in an ohmic contact. The distortion of the diamond network and formation of vacancies and unsatisfied bonds via Ar+ sputtering of the diamond surface change the I‐V characteristics of the Al contact and also facilitate the solid state interdiffusion of Al and C as well as interface reactions at elevated temperatures.