Operation of Silicon Carbide BJTs Free from Bipolar Degradation
Operation of Silicon Carbide BJTs Free from Bipolar Degradation
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碳化硅 BJT 的运行不会出现双极退化
DOI：
10.4028/www.scientific.net/msf.645-648.1057
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
Mats Reimark
中科院分区：
文献类型：
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作者：
A. Konstantinov;M. Domeij;C. Zaring;Imre Keri;J. O. Svedberg;Krister Gumaelius;M. Östling;Mats Reimark
碳化硅双极晶体管的双极退化的机制进行了研究和鉴定。由于低掺杂集电极区域内的堆垛层错（SF）生长，发生双极退化。堆垛层错阻碍了通过集电极的垂直电流传输，使缺陷区饱和。如果BJT在相当低的集电极-发射极偏置下运行，这将导致发射极电流增益的显著下降。基极区在双极退化中不起任何重要作用。长期的应力测试表明，在少数载流子注入条件下，大面积高功率BJT的完全稳定性，只要器件使用低基面位错（BPD）材料制造。然而，大约20%的电流增益压缩观察到的第一个30-60小时的老化下共发射极操作，这是有关的无源基极区中的表面复合的不稳定性。
The mechanisms of bipolar degradation in silicon carbide BJTs are investigated and identified. Bipolar degradation occurs as result of stacking fault (SF) growth within the low-doped collector region. A stacking fault blocks vertical current transport through the collector, driving the defective region into saturation. This results in considerable drop of emitter current gain if the BJT is run at a reasonably low collector-emitter bias. The base region does not play any significant role in bipolar degradation. Long-term stress tests have shown full stability of large-area high-power BJTs under minority carrier injection conditions provided the devices are fabricated using low Basal Plane Dislocation (BPD) material. However, an approximately 20% current gain compression is observed for the first 30-60 hours of burn-in under common emitter operation, which is related to instability of surface recombination in the passive base region.