Optical gain in AlGaN/AlGaN multiple quantum wells grown on high temperature AlN multiple buffers
Optical gain in AlGaN/AlGaN multiple quantum wells grown on high temperature AlN multiple buffers
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在高温 AlN 多重缓冲器上生长的 AlGaN/AlGaN 多量子阱的光学增益
DOI：
10.1002/pssc.201001060
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Gong Y
中科院分区：
文献类型：
--
作者：
Gong Y
用两种不同的高温AlN缓冲层生长的AlGaN/AlGaN多量子阱(MQW)结构，在340 nm处都有明显的受激发射。这允许对多量子阱的光学增益进行研究。基于一种经典的条带长度相关的光抽运方法，已经获得了增益谱，显示出沿m轴的增益高于沿a轴的增益(2011年Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
Amplified spontaneous emission spectra measurements have been carried out on two AlGaN/AlGaN multiple quantum well (MQW) structures grown using two different kinds of high‐temperature AlN buffers, both showing a clear stimulated emission at 340 nm. This allows for investigation of optical gain of the MQWs. Based on a classic method of stripe‐length dependent optical pumping, the gain spectra have been obtained, showing a higher gain along m‐axis than that along a‐axis (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)