A 220-GHz SIS Mixer Tightly Integrated With a Sub-Hundred-Microwatt SiGe IF Amplifier
A 220-GHz SIS Mixer Tightly Integrated With a Sub-Hundred-Microwatt SiGe IF Amplifier
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与百微瓦 SiGe IF 放大器紧密集成的 220GHz SIS 混频器
DOI：
10.1109/tthz.2015.2498041
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发表时间：
2016
影响因子：
3.2
通讯作者：
J. Bardin
中科院分区：
文献类型：
--
作者：
S. Montazeri;P. Grimes;C. Tong;J. Bardin
未来基于超导体-绝缘体-超导体（SIS）混频器的千像素级外差焦平面阵列将需要与混频器紧密集成的亚毫瓦功耗低噪声放大器（LNA）。本文报道了一种LNA，该LNA针对直接连接220 GHz SIS混频器芯片进行了优化，所需直流电源小于100 μW。放大器的设计过程进行了描述，并给出了测量结果。结果表明，当本振频率在214 ~ 226 GHz之间抽运时，该混频器/放大器模块在3.3 ~ 6 GHz中频范围内实现了35 ~ 50 K的双边带系统噪声温度，同时仅需90 μW的直流电源。此外，进一步降低功耗的潜力进行了探索，并成功地运行的LNA功耗低至60 μW。
Future kilopixel-scale heterodyne focal plane arrays based on superconductor-insulator-superconductor (SIS) mixers will require submilliwatt power consumption low-noise amplifiers (LNAs) which are tightly integrated with the mixers. In this paper, an LNA that is optimized for direct connection to a 220-GHz SIS mixer chip and requires less than 100 μW of dc power is reported. The amplifier design process is described, and measurement results are presented. It is shown that, when pumped at local oscillator frequencies between 214 and 226 GHz, the mixer/amplifier module achieves a double-sideband system noise temperature between 35 and 50 K over the 3.3-6 GHz IF frequency range while requiring just 90 μW of dc power. Moreover, the potential to further reduce the power consumption is explored and successful operation is demonstrated for LNA power consumption as low as 60 μW.