80Gb/s NRZ Ge waveguide electro-absorption modulator
80Gb/s NRZ Ge waveguide electro-absorption modulator
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80Gb/s NRZ Ge 波导电吸收调制器
DOI：
10.1364/oe.462890
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发表时间：
2022
期刊：
影响因子：
3.8
通讯作者：
Mingbin Yu
中科院分区：
文献类型：
--
作者：
Yufei Liu;Jialinag Sun;Ruogu Song;Xinyu Li;Jinyu Wang;Shuxiao Wang;Yijia Yu;Wencheng Yue;Yan Cai;Mingbin Yu
我们研制了一种L波段Ge电吸收调制器（EAM），在−3 V偏压下，电光带宽超过67 GHz，达到3 dB。眼图测量显示，在2.3 Vpp的电压摆幅和1605 nm的波长下，非归零开关键控（NRZ-OOK）调制的数据速率超过80 Gbps。通过对多个器件测试结果的比较，证明了CMP后退火工艺的引入可以将EAM的平均静态消光比从7.27 dB提高到11.83 dB，从而证实了器件的可制造性。该器件的动态功耗为6.348 fJ/bit。我们设备的性能是全面的。Ge EAM器件在C和L通信波段也具有优异的光电探测器（PD）性能。器件在1610 nm波长处的响应度为1.04 A/W，在0.28 mW的光输入下，在-3 V偏压下静态功耗为1.87 mW，在-3 V偏压下的3 dB光电带宽超过43 GHz。
We demonstrate a Ge electro-absorption modulator (EAM) in L band with a 3 dB electro-optical bandwidth beyond 67 GHz at −3 V bias voltage. The Eye diagram measurement shows a data rate of over 80 Gbps for non-return-to-zero on-off keying (NRZ-OOK) modulation at a voltage swing of 2.3 Vpp and the wavelength of 1605 nm. Through the comparison of multi-device results, it is proved that the introduction of the annealing process after CMP can increase the mean static extinction ratio of the EAM from 7.27 dB to 11.83 dB, which confirms the manufacturability of the device. The dynamic power consumption of the device is 6.348 fJ/bit. The performance of our device is comprehensive. The Ge EAM device also has excellent performance as a photodetector (PD) in the C and L communication bands. The responsivity of the device is 1.04 A/W at the wavelength of 1610 nm, resulting in ∼0.87 mW of static power consumption at −3 V bias voltage under 0.28 mW of optical input and the 3 dB opto-electric bandwidth of the devices are beyond 43 GHz at −3 V bias.