Characterization of a porous silicon diode with efficient and tunable electroluminescence
Characterization of a porous silicon diode with efficient and tunable electroluminescence
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具有高效且可调谐电致发光的多孔硅二极管的表征
DOI：
10.1063/1.363594
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发表时间：
1996
影响因子：
3.2
通讯作者：
J. Linnros
中科院分区：
文献类型：
--
作者：
N. Lalic;J. Linnros
研究了多孔硅pn结电致发光二极管的电学和光学特性。测量在脉冲条件下进行，以保持高量子效率（≤ 0.2%）操作。使用通过改变蚀刻参数获得的具有不同峰值波长的二极管。多孔硅（PSi）结构的电致发光（EL）和光致发光（PL）之间具有很高的相关性：发光峰位、光谱宽度、量子效率、衰减时间常数和发光猝灭随温度的升高而相似，表明EL和光致发光具有相同的复合机制。正向电流和EL的温度依赖性揭示了热激活的传导机制，其激活能为1.000.1 -0.2 eV，这归因于起伏的硅线中的势垒。还观察到EL猝灭和EL峰在升高的温度下的红移。这是由于较短的非辐射寿命...
Electrical and optical properties of electroluminescent porous silicon pn diodes have been investigated. The measurements were performed under pulsed conditions to maintain high quantum efficiency (∼0.2%) operation. Diodes with different peak wavelengths, obtained by varying the etching parameters, were used. A high correlation between electroluminescence (EL) and photoluminescence (PL) of porous silicon (PSi) structures was observed: similar luminescence peak position, spectral width, quantum efficiencies, decay time constants, and luminescence quenching at increasing temperature, suggesting the same recombination mechanism for both EL and PL. The temperature dependence of the forward current and EL revealed a thermally activated conduction mechanism with an activation energy of ∼0.1–0.2 eV which is attributed to potential barriers in the undulating silicon wires. EL quenching and a redshift of the EL peak at an increased temperature were also observed. This is attributed to shorter nonradiative lifetime...