Variable pressure electron beam lithography (VP-eBL): A new tool for direct patterning of nanometer-scale features on substrates with low electrical conductivity
Variable pressure electron beam lithography (VP-eBL): A new tool for direct patterning of nanometer-scale features on substrates with low electrical conductivity
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变压电子束光刻 (VP-eBL)：一种在低电导率基板上直接图案化纳米级特征的新工具
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
V. Dravid
中科院分区：
文献类型：
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作者：
B. Myers;V. Dravid
本文介绍了可变压力电子束光刻技术（VP-eBL），这是一种在电绝缘衬底上制备纳米结构的新方法。该方法将电子束光刻的高分辨率成像能力与变压扫描电子显微镜（VPSEM）的电荷平衡机制相结合，以控制图像曝光过程中的电荷效应。VP-eBL消除了在这种基板上进行高真空eBL图案化时消除图案失真工件所需的任何额外材料或加工步骤。本文给出了VP-eBL过程的初步表征，表明主波束散射对最终模式定义没有显著影响，也没有增强局部接近效应。此外，我们发现在室内气体的存在下，抗蚀剂层中的散射轮廓的形状被改变，允许在更高的压力下改善图案的定义。
We introduce variable pressure electron beam lithography (VP-eBL), as a new approach for the fabrication of nanometer-scale structures on electrically insulating substrates. This novel approach combines the high-resolution patterning capability of electron beam lithography with the charge-balance mechanism of the variable pressure scanning electron microscope (VPSEM) to control charging effects during pattern exposure. VP-eBL eliminates the need for any of the additional materials or processing steps required to eliminate pattern distortion artifacts during high vacuum eBL patterning on such substrates. Preliminary characterization of the VP-eBL process is presented, which demonstrates no significant change in ultimate pattern definition or enhancement of the local proximity effects due to primary beam scattering. In addition, we find that the shape of the scattering profile in the resist layer is modified in the presence of the chamber gas, allowing improved pattern definition at higher pressures.