2 nm Quantum Optical Lithography
2 nm Quantum Optical Lithography
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DOI：
10.1016/j.optcom.2012.10.079
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发表时间：
2013-03
影响因子：
2.4
通讯作者：
E. Pavel;S. Jinga;E. Andronescu;B. Vasile;G. Kada;A. Sasahara;N. Tosa;A. Matei;M. Dinescu;A. Dinescu;O. Vasile
中科院分区：
文献类型：
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作者：
E. Pavel;S. Jinga;E. Andronescu;B. Vasile;G. Kada;A. Sasahara;N. Tosa;A. Matei;M. Dinescu;A. Dinescu;O. Vasile
光刻技术是半导体工业发展的关键技术。然而，衍射效应将最小可分辨特征尺寸限制为λ/2的瑞利衍射极限，其中λ是光波长。过去已经提出了许多技术来取代光学光刻。在此，我们提出了一种新的量子光学方法来进行亚波长光刻，这是我们目前的技术可以实现的。利用TEM、STEM、SEM和AFM的测量结果表明，利用量子多光子限制效应，可以在荧光光敏微晶玻璃等新型材料中写入2nm宽的谱线。在室温下，聚焦激光二极管光束（λ= 650 nm）在样品表面上可以写入间距为4 nm的高密度线条，远远超过了衍射极限，这是光学光刻技术发展的一个根本障碍。2 nm量子光学光刻是实现该分辨率下的全晶圆级纳米加工的重要步骤。
Optical lithography is a key technique in the development of semiconductor industry. However, diffraction effects limit the minimal resolvable feature size to the Rayleigh diffraction limit of λ/2, where λ is the optical wavelength. Many technologies have been proposed in the past to replace optical lithography. Here, we present a new quantum optical method to do subwavelength lithography which is realizable by our current technology now. Using TEM, STEM, SEM and AFM measurements we show that 2nm width lines could be written in novel materials such as fluorescent photosensitive glass-ceramics by a quantum multiphoton confinement effect. Exposure to the focus laser diode beam (λ=650nm) writes high-density lines with 4nm pitch on the sample surface at room temperature, far beyond the diffraction limit, a fundamental barrier to the exploitation of optical lithography. 2 nm Quantum Optical Lithography is an important step to enable full-wafer-level nanofabrication at this resolution.