Planarization of GaN(0001) Surface by Photo-Electrochemical Method with Solid Acidic or Basic Catalyst
Planarization of GaN(0001) Surface by Photo-Electrochemical Method with Solid Acidic or Basic Catalyst
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DOI：
10.1143/jjap.48.121001
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发表时间：
2009-12
影响因子：
1.5
通讯作者：
J. Murata;Shun Sadakuni;K. Yagi;Y. Sano;T. Okamoto;Kenta Arima;A. Hattori;H. Mimura;K. Yamauchi
中科院分区：
文献类型：
--
作者：
J. Murata;Shun Sadakuni;K. Yagi;Y. Sano;T. Okamoto;Kenta Arima;A. Hattori;H. Mimura;K. Yamauchi
提出了一种新颖的GaN（0001）表面平坦化技术。在该方法中，通过光电化学反应氧化表面，并使用固体酸性/碱性催化剂除去所得氧化物。获得没有划痕和蚀坑的光滑表面。光致发光分析表明，平坦化后的带边发光强度明显增加。
A novel planarization technique for the GaN(0001) surface has been developed. In this method, the surface is oxidized by a photo-electrochemical reaction and the resulting oxide is removed using a solid acidic/basic catalyst. Smooth surfaces that are free from scratches and etch pits are obtained. Photoluminescence analysis shows that the intensity of the band-edge luminescence markedly increases after the planarization.