Si-CMOS-compatible 2D PtSe2-based self-driven photodetector with ultrahigh responsivity and specific detectivity
Si-CMOS-compatible 2D PtSe2-based self-driven photodetector with ultrahigh responsivity and specific detectivity
复制标题
具有超高响应率和特定探测率的 Si-CMOS 兼容 2D PtSe2 基自驱动光电探测器
DOI：
10.1007/s40843-022-2119-1
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Mingsheng Xu
中科院分区：
文献类型：
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作者：
Peng Ye;Han Xiao;Qinghai Zhu;Yuhan Kong;Youmei Tang;Mingsheng Xu
基于二维材料的光电探测器由于其独特的性质和可调谐的光谱响应而引起了人们的广泛关注。然而，它们的性能还不够突出，其制造工艺与硅互补金属氧化物半导体（CMOS）工艺流程的兼容性需要评估。在这里，我们报告了一个前所未有的高性能，空气稳定，自驱动，和宽带室温PD的基础上的PtSe 2/SiO2/Si异质结的架构。PD具有非常突出的8.06 A W−1的响应率，4.78 × 1013 cm Hz 1/2 W−1的真正高的比探测率，0.12 pA的极低的暗电流，以及零偏压下1.29 × 109的梦幻般的光电流/暗电流比。在375、532、1342和1550 nm波长下测得的光电流响应率分别为2.12、5.56、18.12和0.65 mA W−1。此外，所制备的9 × 9器件阵列不仅展示了非常高的均匀性和再现性的PD，而且在紫外-可见光-红外照明成像领域显示出巨大的潜力，与Si-CMOS技术完全兼容的制造。我们设计的PtSe 2/SiO2/Si异质结PD大大抑制了暗电流，提高了二极管的理想因子，并增加了势垒。因此，它铺平了道路的一般策略，以提高性能的PD用于新的光电应用。
Photodetectors (PDs) based on two-dimensional (2D) materials are attracting considerable research interest due to the unique properties of 2D materials and their tunable spectral response. However, their performance is not outstanding enough, and the compatibility of their fabrication process with Si-complementary metal oxide semiconductor (CMOS) process flow needs evaluation. Here, we report an unprecedented high-performance, air-stable, self-driven, and broadband room-temperature PD based on the architecture of the PtSe2/ultrathin SiO2/Si heterojunction. The PD exhibits a very prominent responsivity of 8.06 A W−1, a truly high specific detectivity of 4.78 × 1013 cm Hz1/2 W−1, an extremely low dark current of 0.12 pA, and a fantastic photocurrent/dark current ratio of 1.29 × 109 at zero bias. The measured photocurrent responsivities at wavelengths of 375, 532, 1342, and 1550 nm are 2.12, 5.56, 18.12, and 0.65 mA W−1, respectively. Moreover, the fabricated 9 × 9 device array not only illustrates the very high uniformity and reproducibility of the PDs but also shows great potential in the field of ultraviolet-visiblenear infrared illumination imaging applications with a fabrication fully compatible with Si-CMOS technologies. Our design of the PtSe2/ultrathin SiO2/Si heterojunction PD greatly suppresses dark current, improves the diode ideality factor, and increases the potential barrier. Accordingly, it paves the way for a general strategy to enhance the performance of PDs used in novel optoelectronic applications.