Phosphor-free nanopyramid white light-emitting diodes grown on { 10 1 ¯ 1 } planes using nanospherical-lens photolithography
Phosphor-free nanopyramid white light-emitting diodes grown on { 10 1 ¯ 1 } planes using nanospherical-lens photolithography
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DOI：
10.1063/1.4840137
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发表时间：
2013-12
影响因子：
4
通讯作者：
Kui Wu;T. Wei;D. Lan;Xuecheng Wei;Haiyang Zheng;Yu Chen;Hongxi Lu;Kai-Wen Huang;Junxi Wang-Junxi
中科院分区：
文献类型：
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作者：
Kui Wu;T. Wei;D. Lan;Xuecheng Wei;Haiyang Zheng;Yu Chen;Hongxi Lu;Kai-Wen Huang;Junxi Wang-Junxi
我们报道了一种高效率和低成本的纳米图形的方法，纳米球透镜光刻技术，制造二氧化硅掩模的选择性区域生长。通过控制选择性生长，我们得到了一种高度有序的六角纳米锥发光二极管，其InGaN/GaN量子威尔斯阱生长在纳米晶面上，显示出电驱动的无磷白色光发射。我们发现量子阱宽度和铟掺入量都沿{10（1）over bar 1}面向衬底方向和垂直于{10（1）over bar 1}面的方向沿着线性增加。这种空间分布是宽带发射的原因。此外，使用阴极发光技术，发现蓝色发射来自纳米锥顶部，类似于量子点，绿色发射来自侧壁中间的InGaN量子威尔斯层，并且黄色发射主要来自纳米锥脊的底部，类似于量子线。
We reported a high-efficiency and low-cost nano-pattern method, the nanospherical-lens photolithography technique, to fabricate a SiO2 mask for selective area growth. By controlling the selective growth, we got a highly ordered hexagonal nanopyramid light emitting diodes with InGaN/GaN quantum wells grown on nanofacets, demonstrating an electrically driven phosphor-free white light emission. We found that both the quantum well width and indium incorporation increased linearly along the {10 (1) over bar1} planes towards the substrate and the perpendicular direction to the {10 (1) over bar1} planes as well. Such spatial distribution was responsible for the broadband emission. Moreover, using cathodoluminescence techniques, it was found that the blue emission originated from nanopyramid top, resembling the quantum dots, green emission from the InGaN quantum wells layer at the middle of sidewalls, and yellow emission mainly from the bottom of nanopyramid ridges, similar to the quantum wires.