Improving the quality of GaN crystals by using graphene or hexagonal boron nitride nanosheets substrate.
Improving the quality of GaN crystals by using graphene or hexagonal boron nitride nanosheets substrate.
复制标题
DOI：
10.1021/am5087775
复制
发表时间：
2015-02
影响因子：
9.5
通讯作者：
Lei Zhang;Xian-lei Li;Yongliang Shao;Jiaoxian Yu;Yongzhong Wu;Xiaopeng Hao;Zhengmao Yin;Yuanbin Dai
中科院分区：
文献类型：
--
作者：
Lei Zhang;Xian-lei Li;Yongliang Shao;Jiaoxian Yu;Yongzhong Wu;Xiaopeng Hao;Zhengmao Yin;Yuanbin Dai
人们普遍认为，由于缺乏高质量的氮化镓晶片，氮化物技术的进展受到限制和阻碍。虽然各种外延技术，如外延横向过生长及其衍生物已被用来降低缺陷密度，仍然有很大的空间，为氮化镓晶体的改进。在这里，我们报告石墨烯或六方氮化硼纳米片可用于使用氢化物气相外延方法来改善GaN晶体的质量。这些纳米片直接沉积在用于GaN晶体外延生长的衬底上。系统表征结果表明，GaN晶体的质量得到了很大的提高。利用所得到的GaN晶体制作的发光二极管在室内照明下发出强烈的电致发光。这种简单而有效的技术被认为适用于金属有机化学气相沉积系统，并将在其他晶体生长中找到广泛的应用。
The progress in nitrides technology is widely believed to be limited and hampered by the lack of high-quality gallium nitride wafers. Though various epitaxial techniques like epitaxial lateral overgrowth and its derivatives have been used to reduce defect density, there is still plenty of room for the improvement of gallium nitride crystal. Here, we report graphene or hexagonal boron nitride nanosheets can be used to improve the quality of GaN crystal using hydride vapor phase epitaxy methods. These nanosheets were directly deposited on the substrate that is used for the epitaxial growth of GaN crystal. Systematic characterizations of the as-obtained crystal show that quality of GaN crystal is greatly improved. The fabricated light-emitting diodes using the as-obtained GaN crystals emit strong electroluminescence under room illumination. This simple yet effective technique is believed to be applicable in metal-organic chemical vapor deposition systems and will find wide applications on other crystal growth.