Reversible changes of the fill factor in the ZnO/CdS/Cu(In,Ga)Se2 solar cells
Reversible changes of the fill factor in the ZnO/CdS/Cu(In,Ga)Se2 solar cells
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ZnO/CdS/Cu(In,Ga)Se2太阳能电池填充因子的可逆变化
DOI：
10.1016/j.solmat.2003.06.006
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发表时间：
2003
影响因子：
6.9
通讯作者：
L. Stolt
中科院分区：
文献类型：
--
作者：
M. Igalson;M. Bodegård;L. Stolt
研究了ZnO/CDS/Cu(In，Ga)Se2光伏器件的填充因子(Ff)随偏压和光照的可逆持续变化以及器件电学性质的变化。导纳谱和电容-电压表征揭示了吸收体内的空间电荷分布与Ff之间的关系。我们的实验证明，在高效器件中，FF损耗的一个主要来源是界面附近的过量负电荷造成的。我们用补偿施主引起的弛豫效应解释了界面区域净受主浓度的持续变化--这与导致吸收体亚稳态掺杂能级变化的机制相同。
The reversible persistent changes of the fill factor (FF) induced by the illumination and voltage bias along with changes in the electronic properties of the ZnO/CdS/Cu(In,Ga)Se2photovoltaic devices have been studied. Admittance spectroscopy and capacitance–voltage characterization reveal a correlation between the FF and the space charge distribution within the absorber. Our experiments provide evidence that a major source of FF loss in efficient devices is caused by excess negative charge close to the interface. We explain the persistent changes in the net acceptor concentration in the interface region by the relaxation effects due to compensating donors—the same mechanism, which leads to metastable changes of the doping level in the bulk of the absorber.